@Article{RodriguesJaMiLeViFr:2006:DeHaAm,
               author = "Rodrigues, Gil Capote and Jacobsohn, L. G. and Michel, M. D. and 
                         Lepienski, C. M. and Vieira, A. L. and Franceschini, D. F.",
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and Materials 
                         Science \& Technology Division, Los Alamos National Laboratory 
                         and Departamento de F{\'{\i}}sica, Universidade Federal do 
                         Paran{\'a} and Departamento de F{\'{\i}}sica, Universidade 
                         Federal do Paran{\'a} and Instituto de F{\'{\i}}sica, 
                         Universidade Federal Fluminense and Instituto de F{\'{\i}}sica, 
                         Universidade Federal Fluminense",
                title = "Deposition of hard amorphous hydrogenated carbon films by 
                         radiofrequency parallel-plate hollow-cathode plasmas",
              journal = "Diamond and Related Materials",
                 year = "2006",
               volume = "In press",
             keywords = "Hollow-cathode, Plasma deposition, Amorphous hydrogenated carbon, 
                         Mechanical properties.",
             abstract = "Hard amorphous hydrogenated carbon (a-C:H) films were deposited by 
                         plasma decomposition of CH4 gas in a RF parallel-plate 
                         hollow-cathode system. The deposition system was built by placing 
                         a metallic plate in parallel to and in electrical contact with an 
                         usual RF-PECVD planar cathode. Self-bias versus RF power curves 
                         were used to make an initial characterization of plasma discharges 
                         in nitrogen gas atmospheres, for pressures between 10 and 100 
                         mTorr. The strongly increased power consumption to obtain the same 
                         self-bias in the hollow-cathode system evidenced an increase in 
                         plasma density. The a-C:H films were deposited onto Si single 
                         crystalline substrates, in the \− 50 to \− 500 V 
                         self-bias range, at 5, 10 and 50 mTorr deposition pressures. The 
                         film deposition rate was found to be about four times than that 
                         usually observed for single-cathode RF-PECVD-deposited films, 
                         under methane atmosphere, at similar pressure and self-bias 
                         conditions. Characterization of film structure was carried out by 
                         Raman spectroscopy on films deposited at 10 and 50 mTorr 
                         pressures. Gaussian deconvolution of the Raman spectra in its D 
                         and G bands shows a continuous increase in the ID/IG integrated 
                         band intensity ratio upon self-bias increase, obeying the expected 
                         increasing behavior of the sp2 carbon atom fraction. The peak 
                         position of the G band was found to increase up to \− 300 V 
                         self-bias, showing a nearly constant behavior for higher self-bias 
                         absolute values. On the other hand, the G band width showed a 
                         nearly constant behavior within the entire self-bias range. 
                         Nanohardness measurements have shown that films deposited with 
                         self-bias greater than 300 V are as hard as films obtained by the 
                         usual PECVD techniques, showing a maximum hardness of about 18 
                         GPa. Films were also found to develop high internal compressive 
                         stress. The stress dependence on self-bias showed a strong maximum 
                         at about \− 200 V self-bias, with a maximum stress value of 
                         about 5 GPa.",
                 issn = "0925-9635",
             language = "en",
           targetfile = "Deposition of hard.pdf",
        urlaccessdate = "02 maio 2024"
}